CVD-二维类石墨烯产品-CVD-MoSe2 单层薄膜
货号 | 规格 | 数量 | 价格 |
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Q-0049841 | 100mg |
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Q-0049841 | 250mg |
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Q-0049841 | 500mg |
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Q-0049841 | 1g |
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Q-0049841 | 5g |
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产品照片:
This product contains MoSe2 monolayers on c-cut sapphire substrates. Please note that these MoSe2 monolayers do not reach full area coverage on sapphire or SiO2/Si samples. Sample size measures 1cm in size and the entire sample surface contains monolayer thick MoSe2 sheet. Synthesized monolayer MoSe2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness (please see the technical specifications), however few-layer regions are also anticipated to be observed.
Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). Our samples are always highly luminescent and highly crystallized
Sample Properties
Sample size | 1cm x 1cm square shaped |
Substrate type | (0001) c-cut sapphire |
Coverage | Does not reach full area coverage |
Electrical properties | 1.58 eV Direct Bandgap Semiconductor |
Crystal structure | Hexagonal Phase |
Unit cell parameters | a = b = 0.327 nm, c = 1.295 nm, α = β = 90°, γ = 120° |
Production method | Low pressure Chemical Vapor Deposition (LPCVD) |
Characterization methods | Raman, photoluminescence, TEM, EDS |
参数信息 | |
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外观状态: | 固体或粉末 |
质量指标: | 95%+ |
溶解条件: | 有机溶剂/水 |
CAS号: | N/A |
分子量: | N/A |
储存条件: | -20℃避光保存 |
储存时间: | 1年 |
运输条件: | 室温2周 |
生产厂家: | 西安齐岳生物科技有限公司 |
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二硫化钼(MoS2)是一种典型的层状过渡金属二硫属化物(TMDC),其单层结构由一个钼原子夹在两个硫原子之间构成S–Mo–S三明治式结构。层与层之间通过范德华力结合,易于剥离形成单层或少层二维结构。单层MoS₂具有直接带隙(约1.8 eV),而体相MoS2为间接带隙(约1.2 eV),这一带隙转变使其在电子与光电子领域具有独特优势。
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二硫化钨(WS₂)是另一种重要的过渡金属二硫化物(TMDCs),其晶体结构与MoS₂类似,属于六方晶系,单层结构为S–W–S三明治式。单层WS₂具有约2.0 eV的直接带隙,光吸收性能优于MoS₂,并具有更强的光致发光能力。因其优异的光电性能与较强的抗环境氧化能力,WS₂被广泛研究用于光电器件、催化、电池及气体传感器等领域。
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