CVD-WS2单层薄膜,Isolated monolayer thickness WS2 are grown onto c-cut (0001) sapphire substrates
货号 | 规格 | 数量 | 价格 |
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Q-0049810 | 100mg |
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Q-0049810 | 250mg |
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Q-0049810 | 500mg |
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询价 |
Q-0049810 | 1g |
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询价 |
Q-0049810 | 5g |
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Description:
Isolated monolayer thickness WS2 are grown onto c-cut (0001) sapphire substrates. This particular product contains monolayer thickness WS2 triangular flakes randomly distributed across sapphire substrate. While some regions reach continuity with coalesced WS2 triangles, this sample contains well-separated triangles for advanced spectroscopy, microscopy, and electronic measurements. Synthesized monolayer WS2 triangles are highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness.
Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). Our samples are always highly luminescent and highly crystallized
参数信息 | |
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外观状态: | 固体或粉末 |
质量指标: | 95%+ |
溶解条件: | 有机溶剂/水 |
CAS号: | N/A |
分子量: | N/A |
储存条件: | -20℃避光保存 |
储存时间: | 1年 |
运输条件: | 室温2周 |
生产厂家: | 西安齐岳生物科技有限公司 |
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二硫化钼(MoS2)是一种典型的层状过渡金属二硫属化物(TMDC),其单层结构由一个钼原子夹在两个硫原子之间构成S–Mo–S三明治式结构。层与层之间通过范德华力结合,易于剥离形成单层或少层二维结构。单层MoS₂具有直接带隙(约1.8 eV),而体相MoS2为间接带隙(约1.2 eV),这一带隙转变使其在电子与光电子领域具有独特优势。
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