CVD-WSe2单层薄膜，1cm x 1cm square shaped
| 货号 | 规格 | 数量 | 价格 |
|---|---|---|---|
| Q-0049811 | 100mg |
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询价 |
| Q-0049811 | 250mg |
1
|
询价 |
| Q-0049811 | 500mg |
1
|
询价 |
| Q-0049811 | 1g |
1
|
询价 |
| Q-0049811 | 5g |
1
|
询价 |
17778955912
1521565887
1521565887@qq.comDescription:
This product contains full area coverage WSe2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick WSe2 sheet. Synthesized full area coverage monolayer WSe2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness (please see the technical specifications)
Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). Our samples are always highly luminescent and highly crystallized
Sample Properties
| Sample size | 1cm x 1cm square shaped |
| Substrate type | (0001) c-cut sapphire |
| Coverage | Full coverage monolayer |
| Electrical properties | 1.62 eV Direct Bandgap Semiconductor |
| Crystal structure | Hexagonal Phase |
| Unit cell parameters | a = b = 0.327 nm, c = 1.295 nm, α = β = 90°, γ = 120° |
| Production method | Low pressure Chemical Vapor Deposition (LPCVD) |
| Characterization methods | Raman, photoluminescence, TEM, EDS |
| 参数信息 | |
|---|---|
| 外观状态： | 固体或粉末 |
| 质量指标： | 95%+ |
| 溶解条件： | 有机溶剂/水 |
| CAS号： | N/A |
| 分子量： | N/A |
| 储存条件： | -20℃避光保存 |
| 储存时间： | 1年 |
| 运输条件： | 室温2周 |
| 生产厂家： | 西安齐岳生物科技有限公司 |
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二硫化钼（MoS2）是一种典型的层状过渡金属二硫属化物（TMDC），其单层结构由一个钼原子夹在两个硫原子之间构成S–Mo–S三明治式结构。层与层之间通过范德华力结合，易于剥离形成单层或少层二维结构。单层MoS₂具有直接带隙（约1.8 eV），而体相MoS2为间接带隙（约1.2 eV），这一带隙转变使其在电子与光电子领域具有独特优势。
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CVD-WS2单层薄膜，Isolated monolayer thickness WS2 are grown onto c-cut (0001) sapphire substrates
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CVD-SnSe2单层薄膜，1cm x 1cm square shaped
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